A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS Image Sensor
Hayato Wakabayashi, Keiji Yamaguchi, Masafumi Okano, Souichiro Kuramochi, Oichi Kumagai, Seijiro Sakane, Masamichi Ito1, Masahiro Hatano1, Masaru Kikuchi, Yuuki Yamagata, Takeshi Shikanai, Ken Koseki, Keiji Mabuchi, Yasushi Maruyama, Kentaro Akiyama, Eiji Miyata, Tomoyuki Honda, Masanori Ohashi, Tetsuo Nomoto
The thickness of silicon layer appears to be about 3um, which should give Sony excellent QE. Indeed, red QE approaches the green one, according to the relative graphs in the presentation. No absolute QE numbers are given. Metal aperture does not seem to have an electrical contact to the backside. The backside planarization looks is next to perfect. It seems that Sony has created the ultimate Bayer pixel - at least I do not see what else can be improved here.
Some corrections/additions to the Sony spec I posted earlier:
Process: 0.14um 1P4M
Full well: 9130e at 60C (Saturation)
Dynamic Range: 71dB at 1x gain
Sensitivity: 9890e/Lux*s, 3200K light with IR-cut filter
Supply: 2.7V/1.8V
Power consumption: 375mW, HD video at dark
The low-light luma-SNR after AWB and CCM is 14.5dB is 10 Lux, as measured at 18% gray patch from a 5500K light source through F2.8 lens.