Albert Theuwissen published first part of the overview of Image Sensor four session presentations. Four papers reviewed have quite interesting interesting content.
Samsung pseudo-multiple sampling imager paper has performance data of its 1.4um pixel:
Process: 90nm
2.5T shared architecture
Conversion Gain: 110 uV/e
Full Well: 4100 e
Sensitivity: 3700e-/lux.s
Dark Current: 6.4e-/s at 55C
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» ISSCC 2010: Albert Theuwissen Reviews Image Sensor Session, Part 1