More About Rohm, AIST Presenting CIGS Sensor on IEDM

Tech-On published yet another report on IEDM presentation of Cu-In-Ga-Se image sensor by Rohm and AIST. The sensor has a layer structure composed of n-type ZnO, i-type ZnO, CdS, CIGS and Mo, which are arranged in this order from the top surface. The sensor is placed on a Si LSI via the molybdenum (Mo) layer serving as an electrode. The ZnO layer was formed using RF sputtering. The sensor works in avalanche multiplication mode.